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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1756 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 170V(Min) *High DC Current Gain : hFE= 1500(Min) @IC= 5A *Low Collector Saturation Voltage APPLICATIONS *Designed for high voltage high current amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 200 200 7 10 15 UNIT .cn mi e V V V A IC Collector Current-Continuous ICP Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain CONDITIONS IC= 5A; L= 5mH IC= 25mA; RBE= IE= 50mA; IC= 0 IC= 5A; IB= 10mA B 2SD1756 MIN 170 200 7 TYP. MAX UNIT V V V 1.5 3.5 V V V V A IC= 10A; IB= 100mA IC= 5A; IB= 10mA B Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w w. sem isc IC= 10A; IB= 100mA VCE= 180V; RBE= IC= 5A; VCE= 3V IC= 5A, IB1= -IB2= 10mA; VCC= 30V .cn i 1500 0.9 8.0 3.5 2.0 4.0 500 s s s isc Websitewww.iscsemi.cn 2 |
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